VQ1006P-E3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

400mA

Drain to Source Voltage (Vdss) :

90V

FET Feature :

Logic Level Gate

FET Type :

4 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

-

Power - Max :

2W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

4.5Ohm @ 1A, 10V

Supplier Device Package :

14-DIP

Vgs(th) (Max) @ Id :

2.5V @ 1mA