F411MR12W2M1B76BOMA1
请求报价(RFQ)
- * 联系人姓名:
- * 公司:
- * 电子邮件:
- * 电话:
- * 评论:
- * 验证码:
-
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tj)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 4 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7360pF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- -
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 11.3mOhm @ 100A, 15V
- Supplier Device Package :
- AG-EASY1B-2
- Vgs(th) (Max) @ Id :
- 5.55V @ 40mA
- 数据列表
- F411MR12W2M1B76BOMA1
制造商相关产品
目录相关产品
相关产品
部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
F411JH101J400C | KEMET | 680 | 100PF4 5%V |
F411JH102F100Q | KEMET | 35,000 | 1000PF 100V |
F411JH471J400C | KEMET | 2,000 | 470PF4 5%V |
F411JH471J630C | KEMET | 63 | 470PF6 5%V |
F411JK103G063C | KEMET | 1,845 | 10NF63 2%V |
F411JK332J100C | KEMET | 2,817 | 3N3F10 5%V |