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F415MR12W2M1B76BOMA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 晶体管 - FET、MOSFET - 阵列
- Current - Continuous Drain (Id) @ 25°C :
- 75A (Tj)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 4 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5520pF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- -
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 75A, 15V
- Supplier Device Package :
- AG-EASY1B-2
- Vgs(th) (Max) @ Id :
- 5.55V @ 30mA
- 数据列表
- F415MR12W2M1B76BOMA1
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