QH8M22TCR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.5A (Ta), 2A (Ta)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 10V, 9.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

193pF @ 20V, 450pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

1.1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

2.5V @ 10µA, 3V @ 1mA