- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 40.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 852 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UDFN Exposed Pad
- Power Dissipation (Max) :
- 2.2W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 36.5mOhm @ 7A, 4.5V
- Supplier Device Package :
- 6-DFN (2x2)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- YJQ4666B
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
YJQ40G10A | YANGJIE | 25,000 | DFN(3.3x3.3) N 100V 40A Transis |
YJQ40G10A | YANGJIE | 35,000 | N-CH MOSFET 100V 40A DFN3333-8L- |
YJQ40P03A | YANGJIE | 25,000 | DFN(3.3x3.3) P -30V -40A Transi |
YJQ40P03A | YANGJIE | 35,000 | P-CH MOSFET 30V 40A DFN3333-8L |
YJQ4666B | YANGJIE | 15,000 | DFN2x2-6L P -20V -7A Transistor |