PMWD19UN,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

5.6A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1478pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

2.3W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

23mOhm @ 3.5A, 4.5V

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

700mV @ 1mA