2SA812B-T1B-AT
- Mfr.Part #
- 2SA812B-T1B-AT
- Manufacturer
- Renesas Electronics Corporation
- Package/Case
- -
- Datasheet
- Download
- Description
- 2SA812B-T1B-AT - PNP SILICON EPI
- Stock
- 201000
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 1mA, 6V
- Frequency - Transition :
- 180MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 200 mW
- Product Status :
- Obsolete
- Supplier Device Package :
- 3-MINIMOLD
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- 2SA812B-T1B-AT
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