PBSS4230PAN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

2A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A, 2V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Power - Max :

510mW

Product Status :

Active

Supplier Device Package :

6-HUSON-EP (2x2)

Transistor Type :

-

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

30V