IDC08D120T6MX1SA2

Mfr.Part #
IDC08D120T6MX1SA2
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 1.2KV 10A WAFER
Stock
35000

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
10A
Current - Reverse Leakage @ Vr :
2.7 µA @ 1200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-40°C ~ 175°C
Package / Case :
Die
Product Status :
Obsolete
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
Sawn on foil
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
2.05 V @ 10 A
Datasheets
IDC08D120T6MX1SA2

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

Related products

Part Manufacturer Stock Description
IDC04S60CEX1SA1 Infineon Technologies 35,000 DIODE SIC 600V 4A SAWN WAFER
IDC04S60CEX7SA1 Infineon Technologies 35,000 DIODE GEN PURPOSE SAWN WAFER
IDC05S60CEX1SA1 Infineon Technologies 35,000 DIODE SIC 600V 5A SAWN WAFER
IDC08S120EX1SA3 Infineon Technologies 35,000 DIODE SCHOTTKY 1.2KV 7.5A WAFER
IDC08S120EX7SA1 Infineon Technologies 35,000 DIODE SCHOTTKY 1.2KV 7.5A WAFER
IDC08S60CEX1SA2 Infineon Technologies 35,000 DIODE SIC 600V 8A SAWN WAFER
IDC08S60CEX1SA3 Infineon Technologies 35,000 DIODE SIC 600V 8A SAWN WAFER
IDC08S60CEX7SA1 Infineon Technologies 35,000 DIODE GEN PURPOSE SAWN WAFER